FDA59N30

Symbol Micros: TFDA59N30

91188

TFDA59N30

Contractor Symbol:

Case : TO 3P

Datasheet

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N-MOSFET 59A 300V 500W 0.056Ω

Parameters

Open channel resistance:	56mOhm
Max. drain current:	59A
Max. power loss:	500W
Case:	TO 3P
Manufacturer:	Fairchild
Max. drain-source voltage:	300V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDA59N30 Case style: TO 3P  

External warehouse:

100 pcs.

Quantity of pcs.	60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,9281

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Packaging:
30

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	56mOhm
Max. drain current:	59A
Max. power loss:	500W
Case:	TO 3P
Manufacturer:	Fairchild
Max. drain-source voltage:	300V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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