FDB13AN06A0

Symbol Micros: TFDB13AN06A0
Contractor Symbol:
Case : D2PAK
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Transistor N-MOSFET; 60V; 10V; 13,5mOhm; 62A; 115W; -55°C ~ 175°C;
Parameters
Open channel resistance: 13,5mOhm
Max. drain current: 62A
Max. power loss: 15W
Case: DPAK
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDB13AN06A0 RoHS Case style: D2PAK t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,5087 2,0536 1,7923 1,6289 1,5682
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Packaging:
200
Open channel resistance: 13,5mOhm
Max. drain current: 62A
Max. power loss: 15W
Case: DPAK
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMA

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