FDB28N30TM

Symbol Micros: TFDB28n30tm

148508

TFDB28n30tm

Contractor Symbol:

Case : D2PAK

Datasheet

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Transistor N-Channel MOSFET; 300V; 10V; 129mOhm; 28A; 250W; -55°C~150°C;

Parameters

Open channel resistance:	129mOhm
Max. drain current:	28A
Max. power loss:	250W
Case:	D2PAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	300V
Transistor type:	MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDB28N30TM RoHS Case style: D2PAK t/r Datasheet

In stock:

8 pcs.

Quantity of pcs.	1+	5+	20+	100+	300+
Net price (EUR)	1,8014	1,3357	1,1678	1,0851	1,0591

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FDB28N30TM Case style: D2PAK  

External warehouse:

13600 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,0591

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Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	129mOhm
Max. drain current:	28A
Max. power loss:	250W
Case:	D2PAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	300V
Transistor type:	MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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