FDB52N20TM

Symbol Micros: TFDB52n20tm
Contractor Symbol:
Case : TO263 (D2PAK)
Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK
Parameters
Open channel resistance: 49mOhm
Max. drain current: 52A
Max. power loss: 357W
Case: TO263 (D2PAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDB52N20TM RoHS Case style: TO263t/r (D2PAK) Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 2,0706 1,7278 1,5306 1,4344 1,3804
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Packaging:
10
Manufacturer:: ON-Semicoductor Manufacturer part number: FDB52N20TM RoHS Case style: TO263t/r (D2PAK) Datasheet
In stock:
90 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 2,0706 1,7278 1,5306 1,4344 1,3804
Add to comparison tool
Packaging:
290
Manufacturer:: ON-Semicoductor Manufacturer part number: FDB52N20TM RoHS Case style: TO263t/r (D2PAK) Datasheet
In stock:
102 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 2,0706 1,7278 1,5306 1,4344 1,3804
Add to comparison tool
Packaging:
200
Open channel resistance: 49mOhm
Max. drain current: 52A
Max. power loss: 357W
Case: TO263 (D2PAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD