FDB52N20TM

Symbol Micros: TFDB52n20tm

153731

TFDB52n20tm

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK

Parameters

Open channel resistance:	49mOhm
Max. drain current:	52A
Max. power loss:	357W
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDB52N20TM RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

90 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	2,0774	1,7319	1,5335	1,4402	1,3842

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Packaging:
290 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: FDB52N20TM RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

102 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	2,0774	1,7319	1,5335	1,4402	1,3842

Add to comparison tool Add inquiry (RFQ)

Packaging:
200 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	49mOhm
Max. drain current:	52A
Max. power loss:	357W
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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