FDC2612

Symbol Micros: TFDC2612

91211

TFDC2612

Contractor Symbol:

Case : TSOT23-6

Datasheet

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N-MOSFET 1.1A 200V 0.8W 0.725Ω

Parameters

Open channel resistance:	725mOhm
Max. drain current:	1,1A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	725mOhm
Max. drain current:	1,1A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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