FDC5612

Symbol Micros: TFDC5612

91216

TFDC5612

Contractor Symbol:

Case : TSOT23-6

Datasheet

Technical drawing Add to favourites

N-MOSFET 4.3A 60V 0.8W 0.055Ω

Parameters

Open channel resistance:	94mOhm
Max. drain current:	4,3A
Max. power loss:	1,6W
Case:	TSOT23-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	94mOhm
Max. drain current:	4,3A
Max. power loss:	1,6W
Case:	TSOT23-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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