FDC5614P

Symbol Micros: TFDC5614P

79207

TFDC5614P

Contractor Symbol:

Case : SSOT6L

Datasheet

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P-MOSFET 3A 60V 0.8W 0.105Ω

Parameters

Open channel resistance:	190mOhm
Max. drain current:	3A
Max. power loss:	1,6W
Case:	SSOT6L
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	3A
Max. power loss:	1,6W
Case:	SSOT6L
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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