FDC5614P

Symbol Micros: TFDC5614P
Contractor Symbol:
Case : SSOT6L
P-MOSFET 3A 60V 0.8W 0.105Ω
Parameters
Open channel resistance: 190mOhm
Max. drain current: 3A
Max. power loss: 1,6W
Case: SSOT6L
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: ON-Semiconductor Manufacturer part number: FDC5614P Pbf .564 Case style: SSOT6L  
In stock:
300 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,4442 0,2455 0,1940 0,1760 0,1704
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Packaging:
500
Manufacturer:: ON-Semiconductor Manufacturer part number: FDC5614P Case style: SSOT6L  
External warehouse:
45000 pcs.
Quantity of pcs. 3000+ (Please wait for the order confirmation)
Net price (EUR) 0,1876
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: FDC5614P Case style: SSOT6L  
External warehouse:
2900 pcs.
Quantity of pcs. 100+ (Please wait for the order confirmation)
Net price (EUR) 0,2749
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: FDC5614P Case style: SSOT6L  
External warehouse:
663000 pcs.
Quantity of pcs. 3000+ (Please wait for the order confirmation)
Net price (EUR) 0,1740
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 190mOhm
Max. drain current: 3A
Max. power loss: 1,6W
Case: SSOT6L
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD