FDC608PZ

Symbol Micros: TFDC608PZ

91218

TFDC608PZ

Contractor Symbol:

Case : TSOT23-6

Datasheet

Technical drawing Add to favourites

P-MOSFET 5.8A 20V 0.8W 0.03Ω

Parameters

Open channel resistance:	43mOhm
Max. drain current:	5,8A
Max. power loss:	1,6W
Case:	TSOT23-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDC608PZ RoHS .608Z Case style: TSOT23-6 t/r  

In stock:

230 pcs.

Quantity of pcs.	2+	10+	50+	250+	1000+
Net price (EUR)	0,5855	0,3709	0,2916	0,2636	0,2543

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Packaging:
10/250 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FDC608PZ Case style: TSOT23-6  

External warehouse:

9000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,2543

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	43mOhm
Max. drain current:	5,8A
Max. power loss:	1,6W
Case:	TSOT23-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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