FDC608PZ

Symbol Micros: TFDC608PZ

91218

TFDC608PZ

Contractor Symbol:

Case : TSOT23-6

Datasheet

Technical drawing Add to favourites

P-MOSFET 5.8A 20V 0.8W 0.03Ω

Parameters

Open channel resistance:	43mOhm
Max. drain current:	5,8A
Max. power loss:	1,6W
Case:	TSOT23-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDC608PZ RoHS .608Z Case style: TSOT23-6 t/r  

In stock:

230 pcs.

Quantity of pcs.	2+	10+	50+	250+	1000+
Net price (EUR)	0,5900	0,3737	0,2938	0,2656	0,2562

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Packaging:
10/250 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	43mOhm
Max. drain current:	5,8A
Max. power loss:	1,6W
Case:	TSOT23-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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