FDC608PZ

Symbol Micros: TFDC608PZ
Contractor Symbol:
Case : TSOT23-6
P-MOSFET 5.8A 20V 0.8W 0.03Ω
Parameters
Open channel resistance: 43mOhm
Max. drain current: 5,8A
Max. power loss: 1,6W
Case: TSOT23-6
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC608PZ RoHS .608Z Case style: TSOT23-6 t/r  
In stock:
230 pcs.
Quantity of pcs. 2+ 10+ 50+ 250+ 1000+
Net price (EUR) 0,5897 0,3736 0,2937 0,2655 0,2561
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Packaging:
10/250
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC608PZ Case style: TSOT23-6  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2561
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDC608PZ Case style: TSOT23-6  
External warehouse:
45000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2561
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 43mOhm
Max. drain current: 5,8A
Max. power loss: 1,6W
Case: TSOT23-6
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD