FDC655BN

Symbol Micros: TFDC655BN

91239

TFDC655BN

Contractor Symbol:

Case : TSOT23-6

Datasheet

Technical drawing Add to favourites

N-MOSFET 6.3A 30V 0.8W 0.025Ω

Parameters

Open channel resistance:	25mOhm
Max. drain current:	6,3A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDC655BN Case style: TSOT23-6  

External warehouse:

24000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1188

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FDC655BN Case style: TSOT23-6  

External warehouse:

9000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0873

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	25mOhm
Max. drain current:	6,3A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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