FDC655BN

Symbol Micros: TFDC655BN

91239

TFDC655BN

Contractor Symbol:

Case : TSOT23-6

Datasheet

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N-MOSFET 6.3A 30V 0.8W 0.025Ω

Parameters

Open channel resistance:	25mOhm
Max. drain current:	6,3A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	25mOhm
Max. drain current:	6,3A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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