FDC655BN

Symbol Micros: TFDC655BN

91239

TFDC655BN

Contractor Symbol:

Case : TSOT23-6

Datasheet

Technical drawing Add to favourites

N-MOSFET 6.3A 30V 0.8W 0.025Ω

Parameters

Open channel resistance:	25mOhm
Max. drain current:	6,3A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDC655BN Case style: TSOT23-6  

External warehouse:

9000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1030

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FDC655BN Case style: TSOT23-6  

External warehouse:

9000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0872

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	25mOhm
Max. drain current:	6,3A
Max. power loss:	800mW
Case:	TSOT23-6
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.