FDC658AP
Symbol Micros:
TFDC658AP
Case : TSOT23-6
P-MOSFET 4A 30V 0.8W 0.05Ω
Parameters
| Open channel resistance: | 75mOhm |
| Max. drain current: | 4A |
| Max. power loss: | 1,6W |
| Case: | TSOT23-6 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 30V |
| Transistor type: | P-MOSFET |
Manufacturer:: Fairchild
Manufacturer part number: FDC658AP RoHS
Case style: TSOT23-6 t/r
Datasheet
In stock:
4 pcs.
| Quantity of pcs. | 3+ | 10+ | 50+ | 200+ | 1100+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,3632 | 0,2382 | 0,1703 | 0,1490 | 0,1394 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDC658AP
Case style: TSOT23-6
External warehouse:
213000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1857 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDC658AP
Case style: TSOT23-6
External warehouse:
60000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1830 |
| Open channel resistance: | 75mOhm |
| Max. drain current: | 4A |
| Max. power loss: | 1,6W |
| Case: | TSOT23-6 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 30V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 25V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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