FDD13AN06A0 ON Semiconductor

Symbol Micros: TFDD13an06a0

129228

TFDD13an06a0

Contractor Symbol:

Case : DPAK

Datasheet

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N-Channel 60V 9.9A (Ta), 50A (Tc) 115W (Tc) Surface Mount DPAK

Parameters

Open channel resistance:	34mOhm
Max. drain current:	50A
Max. power loss:	115W
Case:	DPAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	34mOhm
Max. drain current:	50A
Max. power loss:	115W
Case:	DPAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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