18N10

Symbol Micros: TFDD3690 GO

397093

TFDD3690 GO

Contractor Symbol:

Case : TO252

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Transistor MOSFET; TO-252; N-Channel; NO ESD; 100V; 25A; 62.5W; 2V; 37mΩ; 42mΩ FDD3690

Parameters

Open channel resistance:	63mOhm
Max. drain current:	25A
Max. power loss:	62,5W
Case:	TO252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	63mOhm
Max. drain current:	25A
Max. power loss:	62,5W
Case:	TO252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 155°C
Mounting:	SMD

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