FDD5612 ON Semiconductor

Symbol Micros: TFDD5612
Contractor Symbol:
Case : DPAK
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N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3
Parameters
Open channel resistance: 103mOhm
Max. drain current: 18A
Max. power loss: 42W
Case: DPAK
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 103mOhm
Max. drain current: 18A
Max. power loss: 42W
Case: DPAK
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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