FDD5612 ON Semiconductor

Symbol Micros: TFDD5612

129297

TFDD5612

Contractor Symbol:

Case : DPAK

Datasheet

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N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3

Parameters

Open channel resistance:	103mOhm
Max. drain current:	18A
Max. power loss:	42W
Case:	DPAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	103mOhm
Max. drain current:	18A
Max. power loss:	42W
Case:	DPAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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