FDD7N25LZTM
Symbol Micros:
TFDD7n25lztm
Case : TO252
N-MOSFET 6.2A 250V 550mOhm
Parameters
Open channel resistance: | 570mOhm |
Max. drain current: | 6,2A |
Max. power loss: | 56W |
Case: | TO252 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 250V |
Transistor type: | N-MOSFET |
Open channel resistance: | 570mOhm |
Max. drain current: | 6,2A |
Max. power loss: | 56W |
Case: | TO252 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 250V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols