FDD7N25LZTM

Symbol Micros: TFDD7n25lztm
Contractor Symbol:
Case : TO252
N-MOSFET 6.2A 250V 550mOhm
Parameters
Open channel resistance: 570mOhm
Max. drain current: 6,2A
Max. power loss: 56W
Case: TO252
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 250V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDD7N25LZTM RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
15 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 270+
Net price (EUR) 1,1424 0,7961 0,6760 0,6171 0,6006
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Packaging:
270
Open channel resistance: 570mOhm
Max. drain current: 6,2A
Max. power loss: 56W
Case: TO252
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 250V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD