FDD86102

Symbol Micros: TFDD86102

111398

TFDD86102

Contractor Symbol:

Case : TO252

Datasheet

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N-MOSFET 8A/36A 100V

Parameters

Open channel resistance:	44mOhm
Max. drain current:	36A
Max. power loss:	62W
Case:	TO252
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	44mOhm
Max. drain current:	36A
Max. power loss:	62W
Case:	TO252
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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