FDD86102LZ

Symbol Micros: TFDD86102lz

111399

TFDD86102lz

Contractor Symbol:

Case : TO252

Datasheet

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N-MOSFET 2A/35A 100V

Parameters

Open channel resistance:	40mOhm
Max. power loss:	54W
Max. drain current:	35A
Case:	TO252
Manufacturer:	Fairchild
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: FDD86102LZ RoHS Case style: TO252 (DPACK) t/r  

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2114	0,9258	0,7646	0,6702	0,6380

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Packaging:
10 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FDD86102LZ Case style: TO252  

External warehouse:

2500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,6380

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	40mOhm
Max. power loss:	54W
Max. drain current:	35A
Case:	TO252
Manufacturer:	Fairchild
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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