FDG6308P

Symbol Micros: TFDG6308P

180352

TFDG6308P

Contractor Symbol:

Case : SC70-6

Datasheet

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Trans MOSFET P-CH 20V 0.6A 6-Pin SC-70 T/R ONSEMI

Parameters

Open channel resistance:	400mOhm
Max. drain current:	600mA
Max. power loss:	300mW
Case:	SC70-6
Manufacturer:	ONSEMI
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	400mOhm
Max. drain current:	600mA
Max. power loss:	300mW
Case:	SC70-6
Manufacturer:	ONSEMI
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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