FDG6308P-P

Symbol Micros: TFDG6308P-P TEC

372209

TFDG6308P-P TEC

Contractor Symbol:

Case : SOT363

Datasheet

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SOT-363 MOSFETs ROHS

Parameters

Open channel resistance:	1,05Ohm
Max. drain current:	1,1A
Max. power loss:	280mW
Case:	SOT363
Manufacturer:	TECH PUBLIC
Max. drain-source voltage:	20V
Transistor type:	2xP-MOSFET

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Estimated date:
2026-12-31

Quantity of pcs.: 200

• Parameters

Open channel resistance:	1,05Ohm
Max. drain current:	1,1A
Max. power loss:	280mW
Case:	SOT363
Manufacturer:	TECH PUBLIC
Max. drain-source voltage:	20V
Transistor type:	2xP-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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