FDG6332C

Symbol Micros: TFDG6332c

289099

TFDG6332c

Contractor Symbol:

Case : SC-88

Datasheet

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Transistor N/P-MOSFET; 20V; 12V; 300mOhm; 600mA; 300mW; -55°C~150°C; Substitute: FDG6332C-F085; FDG6332C_F085;

Parameters

Open channel resistance:	300mOhm
Max. drain current:	300mA
Max. power loss:	300mW
Case:	SC-88
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	N/P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDG6332C RoHS 32. Case style: SC-88 t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4282	0,2815	0,2015	0,1762	0,1651

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	300mOhm
Max. drain current:	300mA
Max. power loss:	300mW
Case:	SC-88
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	N/P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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