FDG6335N

Symbol Micros: TFDG6335N

180094

TFDG6335N

Contractor Symbol:

Case : SC70-6

Datasheet

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Trans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R ONSEMI

Parameters

Open channel resistance:	400mOhm
Max. drain current:	700mA
Max. power loss:	300mW
Case:	SC70-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDG6335N RoHS Case style: SC70-6 t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5008	0,3023	0,2331	0,2100	0,1999

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200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	400mOhm
Max. drain current:	700mA
Max. power loss:	300mW
Case:	SC70-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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