FDMC8010DC

Symbol Micros: TFDMC8010DC

162373

TFDMC8010DC

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Datasheet

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Transistor N-Channel MOSFET; 30V; 20V; 1.28mOhm; 37A; 3W; -55°C~150°C;

Parameters

Open channel resistance:	1,28mOhm
Max. drain current:	37A
Max. power loss:	30W
Case:	PQFN8
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,28mOhm
Max. drain current:	37A
Max. power loss:	30W
Case:	PQFN8
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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