GT700P08T

Symbol Micros: TFDMC86139P GO

397029

TFDMC86139P GO

Contractor Symbol:

Case : TO220

Datasheet

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Transistor MOSFET; TO-220; P-Channel; NO ESD; -80V; -25A; 125W; -2.5V; 58mΩ; FDMC86139P;

Parameters

Open channel resistance:	75mOhm
Max. drain current:	25A
Max. power loss:	125W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	80V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	75mOhm
Max. drain current:	25A
Max. power loss:	125W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	80V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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