FDMS86101

Symbol Micros: TFDMS86101

148491

TFDMS86101

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Case : PQFN08 (6x5mm)

Datasheet

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Trans MOSFET N-CH Si 100V 12.4A 8-Pin Power 56 EP

Parameters

Open channel resistance:	13,5mOhm
Max. power loss:	2,5W
Max. drain current:	12,4A
Case:	PQFN08 (6x5mm)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	13,5mOhm
Max. power loss:	2,5W
Max. drain current:	12,4A
Case:	PQFN08 (6x5mm)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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