FDN302P

Symbol Micros: TFDN302p

76394

TFDN302p

Contractor Symbol:

Case : SSOT3

Datasheet

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Transistor P-Channel MOSFET; 20V; 12V; 84mOhm; 2,4A; 500mW; -55°C ~ 150°C;

Parameters

Open channel resistance:	84mOhm
Max. drain current:	2,4A
Max. power loss:	500mW
Case:	SSOT3
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN302P RoHS .302.. Case style: SSOT3  

In stock:

480 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,5587	0,3357	0,2559	0,2310	0,2230

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	84mOhm
Max. drain current:	2,4A
Max. power loss:	500mW
Case:	SSOT3
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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