FDN302P

Symbol Micros: TFDN302p

76394

TFDN302p

Contractor Symbol:

Case : SSOT3

Datasheet

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Transistor P-Channel MOSFET; 20V; 12V; 84mOhm; 2,4A; 500mW; -55°C ~ 150°C;

Parameters

Open channel resistance:	84mOhm
Max. drain current:	2,4A
Max. power loss:	500mW
Case:	SSOT3
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDN302P RoHS Case style: SSOT3  

In stock:

480 pcs.

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3483	0,1937	0,1528	0,1389	0,1343

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	84mOhm
Max. drain current:	2,4A
Max. power loss:	500mW
Case:	SSOT3
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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