FDN306P
Symbol Micros:
TFDN306p
Case : SSOT3
Transistor P-Channel MOSFET; 12V; 8V; 80mOhm; 2,6A; 500mW; -55°C ~ 150°C;
Parameters
| Open channel resistance: | 80mOhm |
| Max. drain current: | 2,6A |
| Max. power loss: | 500mW |
| Case: | SSOT3 |
| Manufacturer: | Fairchild |
| Max. drain-source voltage: | 12V |
| Transistor type: | P-MOSFET |
| Open channel resistance: | 80mOhm |
| Max. drain current: | 2,6A |
| Max. power loss: | 500mW |
| Case: | SSOT3 |
| Manufacturer: | Fairchild |
| Max. drain-source voltage: | 12V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 8V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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