FDN308P

Symbol Micros: TFDN308p

113356

TFDN308p

Contractor Symbol:

Case : SuperSOT3

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P-MOSFET 1.5A 20V 0.5W 0.125Ω

Parameters

Open channel resistance:	125mOhm
Max. power loss:	500mW
Max. drain current:	1,5A
Case:	SuperSOT3
Manufacturer:	ONSEMI
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	125mOhm
Max. power loss:	500mW
Max. drain current:	1,5A
Case:	SuperSOT3
Manufacturer:	ONSEMI
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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