FDN335N

Symbol Micros: TFDN335n

113358

TFDN335n

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.7A 20V 0.5W 0.07Ω

Parameters

Open channel resistance:	120mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDN335N RoHS Case style: SOT23t/r Datasheet

In stock:

498 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,4449	0,2669	0,2046	0,1843	0,1779

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	120mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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