FDN335N

Symbol Micros: TFDN335n
Contractor Symbol:
Case : SOT23
N-MOSFET 1.7A 20V 0.5W 0.07Ω
Parameters
Open channel resistance: 120mOhm
Max. drain current: 1,7A
Max. power loss: 500mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN335N RoHS Case style: SOT23t/r Datasheet
In stock:
498 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,4460 0,2676 0,2052 0,1848 0,1784
Add to comparison tool
Packaging:
500
Open channel resistance: 120mOhm
Max. drain current: 1,7A
Max. power loss: 500mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD