FDN335N

Symbol Micros: TFDN335n

113358

TFDN335n

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.7A 20V 0.5W 0.07Ω

Parameters

Open channel resistance:	120mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN335N RoHS Case style: SOT23t/r Datasheet

In stock:

498 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,4475	0,2685	0,2059	0,1854	0,1790

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Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN335N Case style: SOT23  

External warehouse:

780000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1790

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN335N Case style: SOT23  

External warehouse:

12000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1790

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN335N Case style: SOT23  

External warehouse:

114000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1790

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	120mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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