FDN336P

Symbol Micros: TFDN336p

113359

TFDN336p

Contractor Symbol:

Case : SuperSOT3

Datasheet

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P-MOSFET -1.3A -20V 0.5W 0.122Ω

Parameters

Open channel resistance:	320mOhm
Max. drain current:	1,3A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN336P RoHS Case style: SuperSOT3  

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,3099	0,1977	0,1387	0,1204	0,1127

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	320mOhm
Max. drain current:	1,3A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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