FDN336P

Symbol Micros: TFDN336p

113359

TFDN336p

Contractor Symbol:

Case : SuperSOT3

Datasheet

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P-MOSFET -1.3A -20V 0.5W 0.122Ω

Parameters

Open channel resistance:	320mOhm
Max. drain current:	1,3A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDN336P RoHS Case style: SuperSOT3  

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,3007	0,1918	0,1346	0,1169	0,1093

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Packaging:
200 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: FDN336P Case style: SuperSOT3  

External warehouse:

69000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,1093

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	320mOhm
Max. drain current:	1,3A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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