FDN337N

Symbol Micros: TFDN337n
Contractor Symbol:
Case : SOT23-3
N-MOSFET 30V 2.2A
Parameters
Open channel resistance: 110mOhm
Max. drain current: 2,2A
Max. power loss: 500mW
Case: SOT23-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN337N Case style: SOT23-3  
External warehouse:
36000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0601
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN337N Case style: SOT23-3  
External warehouse:
309000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0604
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN337N Case style: SOT23-3  
External warehouse:
579000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0541
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 110mOhm
Max. drain current: 2,2A
Max. power loss: 500mW
Case: SOT23-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD