FDN338P-NL SOT23-3 VBsemi Elec

Symbol Micros: TFDN338p VBS

356881

TFDN338p VBS

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 20V; 12V; 35mOhm; 5A; 2,5W; -55°C~150°C;

Parameters

Open channel resistance:	35mOhm
Max. drain current:	5A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VBS
Max. drain-source voltage:	20V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	35mOhm
Max. drain current:	5A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VBS
Max. drain-source voltage:	20V
Max. drain-gate voltage:	10V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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