FDN358P
Symbol Micros:
TFDN358p
Case : SuperSOT3
P-MOSFET 1.5A 30V 0.5W 0.125Ω
Parameters
| Open channel resistance: | 210mOhm |
| Max. drain current: | 1,5A |
| Max. power loss: | 500mW |
| Case: | SuperSOT3 |
| Manufacturer: | Fairchild |
| Max. drain-source voltage: | 30V |
| Transistor type: | P-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN358P RoHS
Case style: SuperSOT3
Datasheet
In stock:
1180 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,4916 | 0,2973 | 0,2285 | 0,2062 | 0,1962 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN358P
Case style: SuperSOT3
External warehouse:
429000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1962 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FDN358P
Case style: SuperSOT3
External warehouse:
33000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1962 |
| Open channel resistance: | 210mOhm |
| Max. drain current: | 1,5A |
| Max. power loss: | 500mW |
| Case: | SuperSOT3 |
| Manufacturer: | Fairchild |
| Max. drain-source voltage: | 30V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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