FDN358P

Symbol Micros: TFDN358p

113365

TFDN358p

Contractor Symbol:

Case : SuperSOT3

Datasheet

Add to favourites

P-MOSFET 1.5A 30V 0.5W 0.125Ω

Parameters

Open channel resistance:	210mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN358P RoHS Case style: SuperSOT3 Datasheet

In stock:

1180 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,4964	0,3002	0,2307	0,2083	0,1981

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN358P Case style: SuperSOT3  

External warehouse:

144000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1981

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	210mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.