FDN358P

Symbol Micros: TFDN358p

113365

TFDN358p

Contractor Symbol:

Case : SuperSOT3

Datasheet

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P-MOSFET 1.5A 30V 0.5W 0.125Ω

Parameters

Open channel resistance:	210mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDN358P RoHS Case style: SuperSOT3 Datasheet

In stock:

3000 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3986	0,2198	0,1729	0,1601	0,1535

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Packaging:
3000 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: FDN358P Case style: SuperSOT3  

External warehouse:

66000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,1535

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	210mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	Fairchild
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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