FDN360P

Symbol Micros: TFDN360P
Contractor Symbol:
Case : SSOT3
Transistor P-Channel MOSFET; 30V; 20V; 136mOhm; 2A; 500mW; -55°C ~ 150°C;
Parameters
Open channel resistance: 136mOhm
Max. drain current: 2A
Max. power loss: 500mW
Case: SSOT3
Manufacturer: Fairchild
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN360P RoHS Case style: SSOT3  
In stock:
300 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 1500+
Net price (EUR) 0,3039 0,1943 0,1369 0,1161 0,1105
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Packaging:
300
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN360P Case style: SSOT3  
External warehouse:
87000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1105
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDN360P Case style: SSOT3  
External warehouse:
228000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1105
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 136mOhm
Max. drain current: 2A
Max. power loss: 500mW
Case: SSOT3
Manufacturer: Fairchild
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD