FDN361BN

Symbol Micros: TFDN361bn

113368

TFDN361bn

Contractor Symbol:

Case : SuperSOT3

Datasheet

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N-MOSFET 1.4A 30V 0.5W 0.16Ohm;

Parameters

Open channel resistance:	160mOhm
Max. drain current:	1,4A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	160mOhm
Max. drain current:	1,4A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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