FDN5618P

Symbol Micros: TFDN5618p

92740

TFDN5618p

Contractor Symbol:

Case : SSOT3

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 315mOhm; 10A; 0,5W; -55°C~150°C;

Parameters

Open channel resistance:	315mOhm
Max. drain current:	10A
Max. power loss:	500mW
Case:	SSOT3
Manufacturer:	ONSEMI
Max. drain-source voltage:	60V
Max. drain-gate voltage:	4V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDN5618P RoHS 618. Case style: SSOT3 Datasheet

In stock:

2468 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,2716	0,1445	0,1122	0,1035	0,0990

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Packaging:
3000 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: FDN5618P Case style: SSOT3  

External warehouse:

1527000 pcs.

Quantity of pcs.	6000+ (Please wait for the order confirmation)
Net price (EUR)	0,0990

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	315mOhm
Max. drain current:	10A
Max. power loss:	500mW
Case:	SSOT3
Manufacturer:	ONSEMI
Max. drain-source voltage:	60V
Max. drain-gate voltage:	4V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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