FDN5630

Symbol Micros: TFDN5630

113369

TFDN5630

Contractor Symbol:

Case : SuperSOT3

Datasheet

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N-MOSFET 1.7A 60V 0.5W 0.1Ω

Parameters

Open channel resistance:	180mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN5630 Case style: SuperSOT3  

External warehouse:

21000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0855

Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FDN5630 Case style: SuperSOT3  

External warehouse:

186000 pcs.

Quantity of pcs.	6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0814

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	180mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SuperSOT3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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