FDP18N50

Symbol Micros: TFDP18n50

169353

TFDP18n50

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C;

Parameters

Open channel resistance:	265mOhm
Max. drain current:	18A
Max. power loss:	235W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDP18N50 RoHS Case style: TO220  

In stock:

17 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,0698	1,7350	1,5430	1,4236	1,3791

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FDP18N50 Case style: TO220  

External warehouse:

700 pcs.

Quantity of pcs.	10+ (Please wait for the order confirmation)
Net price (EUR)	1,6783

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Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	265mOhm
Max. drain current:	18A
Max. power loss:	235W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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