FDP18N50

Symbol Micros: TFDP18n50
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C;
Parameters
Open channel resistance: 265mOhm
Max. drain current: 18A
Max. power loss: 235W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP18N50 RoHS Case style: TO220  
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,0692 1,7345 1,5426 1,4232 1,3787
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Packaging:
50
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP18N50 Case style: TO220  
External warehouse:
30521 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,3787
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP18N50 Case style: TO220  
External warehouse:
990 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,6790
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP18N50 Case style: TO220  
External warehouse:
1000 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,3787
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 265mOhm
Max. drain current: 18A
Max. power loss: 235W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT