FDP18N50

Symbol Micros: TFDP18n50
Contractor Symbol:
Case : TO220
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Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C;
Parameters
Open channel resistance: 265mOhm
Max. drain current: 18A
Max. power loss: 235W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP18N50 RoHS Case style: TO220  
In stock:
25 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,8806 2,3966 2,1104 1,9289 1,8591
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Packaging:
50
Open channel resistance: 265mOhm
Max. drain current: 18A
Max. power loss: 235W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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