FDP3652

Symbol Micros: TFDP3652

169367

TFDP3652

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Case : TO220

Datasheet

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N-MOSFET 61A 100V 150W 0.016Ω

Parameters

Open channel resistance:	43mOhm
Max. drain current:	61A
Max. power loss:	150W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	43mOhm
Max. drain current:	61A
Max. power loss:	150W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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