FDP51N25

Symbol Micros: TFDP51n25

169372

TFDP51n25

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 250V; 30V; 60mOhm; 51A; 320W; -55°C ~ 150°C;

Parameters

Open channel resistance:	60mOhm
Max. drain current:	51A
Max. power loss:	320W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	250V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDP51N25 RoHS Case style: TO220  

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,1105	1,7701	1,5729	1,4508	1,4062

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	60mOhm
Max. drain current:	51A
Max. power loss:	320W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	250V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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