FDP52N20

Symbol Micros: TFDP52n20

169373

TFDP52n20

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 200V; 30V; 49mOhm; 52A; 357W; -55°C ~ 150°C;

Parameters

Open channel resistance:	49mOhm
Max. drain current:	52A
Max. power loss:	357W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDP52N20 RoHS Case style: TO220 Datasheet

In stock:

40 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,8849	1,5807	1,4045	1,2970	1,2558

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: FDP52N20 Case style: TO220  

External warehouse:

224 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	1,4578

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	49mOhm
Max. drain current:	52A
Max. power loss:	357W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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