FDP61N20

Symbol Micros: TFDP61n20
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 200V; 30V; 41mOhm; 61A; 417W; -55°C ~ 150°C;
Parameters
Open channel resistance: 41mOhm
Max. drain current: 61A
Max. power loss: 417W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP61N20 RoHS Case style: TO220 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,3735 1,9905 1,7683 1,6312 1,5815
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Packaging:
50
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP61N20 Case style: TO220  
External warehouse:
800 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,5815
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Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP61N20 Case style: TO220  
External warehouse:
1000 pcs.
Quantity of pcs. 150+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,5815
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FDP61N20 Case style: TO220  
External warehouse:
6894 pcs.
Quantity of pcs. 150+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,5815
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 41mOhm
Max. drain current: 61A
Max. power loss: 417W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT