FDP61N20

Symbol Micros: TFDP61n20

169380

TFDP61n20

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 200V; 30V; 41mOhm; 61A; 417W; -55°C ~ 150°C;

Parameters

Open channel resistance:	41mOhm
Max. drain current:	61A
Max. power loss:	417W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDP61N20 RoHS Case style: TO220 Datasheet

In stock:

59 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,9364	1,6225	1,4425	1,3317	1,2902

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FDP61N20 Case style: TO220  

External warehouse:

2967 pcs.

Quantity of pcs.	800+ (Please wait for the order confirmation)
Net price (EUR)	1,2902

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Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	41mOhm
Max. drain current:	61A
Max. power loss:	417W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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