FDP61N20

Symbol Micros: TFDP61n20

169380

TFDP61n20

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 200V; 30V; 41mOhm; 61A; 417W; -55°C ~ 150°C;

Parameters

Open channel resistance:	41mOhm
Max. drain current:	61A
Max. power loss:	417W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDP61N20 RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,3507	1,9714	1,7513	1,6155	1,5664

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	41mOhm
Max. drain current:	61A
Max. power loss:	417W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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