FDPF3860T

Symbol Micros: TFDPF3860t

169434

TFDPF3860t

Contractor Symbol:

Case : TO220iso

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 100V; 20V; 38,2mOhm; 20A; 33,8W; -55°C ~ 150°C;

Parameters

Open channel resistance:	38,2mOhm
Max. drain current:	20A
Max. power loss:	33,8W
Case:	TO220iso
Manufacturer:	Fairchild
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: FDPF3860T RoHS Case style: TO220iso  

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,2500	0,8755	0,7444	0,6812	0,6578

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Packaging:
20 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FDPF3860T Case style: TO220iso  

External warehouse:

2000 pcs.

Quantity of pcs.	250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,6578

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	38,2mOhm
Max. drain current:	20A
Max. power loss:	33,8W
Case:	TO220iso
Manufacturer:	Fairchild
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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