FDS6675BZ

Symbol Micros: TFDS6675bz
Contractor Symbol:
Case : SOP08
Transistor P-Channel MOSFET; 30V; 25V; 21,8mOhm; 11A; 2,5W; -55°C ~ 150°C;
Parameters
Open channel resistance: 21,8mOhm
Max. power loss: 2,5W
Max. drain current: 11A
Case: SOP08
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: ON-Semiconductor Manufacturer part number: FDS6675BZ RoHS Case style: SOP08t/r Datasheet
In stock:
70 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,0457 0,6964 0,5752 0,5194 0,4984
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Packaging:
100
Manufacturer:: ON-Semiconductor Manufacturer part number: FDS6675BZ Case style: SOP08  
External warehouse:
65000 pcs.
Quantity of pcs. 2500+ (Please wait for the order confirmation)
Net price (EUR) 0,4984
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: FDS6675BZ Case style: SOP08  
External warehouse:
7500 pcs.
Quantity of pcs. 2500+ (Please wait for the order confirmation)
Net price (EUR) 0,4984
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 21,8mOhm
Max. power loss: 2,5W
Max. drain current: 11A
Case: SOP08
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD