FDS6675BZ

Symbol Micros: TFDS6675bz

169515

TFDS6675bz

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

Transistor P-Channel MOSFET; 30V; 25V; 21,8mOhm; 11A; 2,5W; -55°C ~ 150°C;

Parameters

Open channel resistance:	21,8mOhm
Max. drain current:	11A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDS6675BZ RoHS Case style: SOP08t/r Datasheet

In stock:

75 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,0584	0,7048	0,5822	0,5256	0,5044

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FDS6675BZ Case style: SOP08  

External warehouse:

177500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5044

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	21,8mOhm
Max. drain current:	11A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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