FDS6675BZ

Symbol Micros: TFDS6675bz

169515

TFDS6675bz

Contractor Symbol:

Case : SOP08

Datasheet

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Transistor P-Channel MOSFET; 30V; 25V; 21,8mOhm; 11A; 2,5W; -55°C ~ 150°C;

Parameters

Open channel resistance:	21,8mOhm
Max. drain current:	11A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDS6675BZ RoHS Case style: SOP08t/r Datasheet

In stock:

70 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,0513	0,7001	0,5783	0,5221	0,5011

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	21,8mOhm
Max. drain current:	11A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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