FDV301N

Symbol Micros: TFDV301n
Contractor Symbol:
Case : SOT23
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N-MOSFET 0.22A 25V 0.35W 4Ω
Parameters
Open channel resistance: 9Ohm
Max. drain current: 220mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FDV301N RoHS Case style: SOT23t/r  
In stock:
40140 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2037 0,0968 0,0544 0,0414 0,0370
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Packaging:
3000
Manufacturer:: ON-Semicoductor Manufacturer part number: FDV301N RoHS Case style: SOT23t/r  
In stock:
193 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2037 0,0968 0,0544 0,0414 0,0370
Add to comparison tool
Packaging:
1047
Manufacturer:: ON-Semicoductor Manufacturer part number: FDV301N RoHS Case style: SOT23t/r  
In stock:
833 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2037 0,0968 0,0544 0,0414 0,0370
Add to comparison tool
Packaging:
1953
Open channel resistance: 9Ohm
Max. drain current: 220mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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