FDV301N

Symbol Micros: TFDV301n
Contractor Symbol:
Case : SOT23
N-MOSFET 0.22A 25V 0.35W 4Ω
Parameters
Open channel resistance: 9Ohm
Max. drain current: 220mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Max. gate-source Voltage: 8V
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV301N RoHS Case style: SOT23t/r  
In stock:
833 pcs.
Quantity of pcs. 5+ 30+ 200+ 1047+ 5235+
Net price (EUR) 0,1275 0,0510 0,0297 0,0246 0,0232
Add to comparison tool
Packaging:
1953
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV301N RoHS Case style: SOT23t/r  
In stock:
193 pcs.
Quantity of pcs. 5+ 30+ 200+ 1047+ 5235+
Net price (EUR) 0,1275 0,0510 0,0297 0,0246 0,0232
Add to comparison tool
Packaging:
1047
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV301N RoHS Case style: SOT23t/r  
In stock:
20340 pcs.
Quantity of pcs. 5+ 30+ 200+ 1047+ 5235+
Net price (EUR) 0,1275 0,0510 0,0297 0,0246 0,0232
Add to comparison tool
Packaging:
3000
Open channel resistance: 9Ohm
Max. drain current: 220mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Max. gate-source Voltage: 8V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD