FDV303N China

Symbol Micros: TFDV303n c

335343

TFDV303n  c

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 20V; -/+12V; 80mOhm; 2A; 2,1W; -55°C~150°C;

Parameters

Power dissipation:	2,1W
Manufacturer:	VBsemi
Case:	SOT23
Max. collector current:	2A
Max collector-emmiter voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: FDV303N RoHS Case style: SOT23t/r Datasheet

In stock:

75 pcs.

Quantity of pcs.	5+	20+	75+	300+	1500+
Net price (EUR)	0,2411	0,1328	0,0924	0,0759	0,0690

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Packaging:
75 Quantity (multiple: 1)

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• Parameters

Power dissipation:	2,1W
Manufacturer:	VBsemi
Case:	SOT23
Max. collector current:	2A
Max collector-emmiter voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	MOSFET

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