FGA15N120ANTDTU_F109

Symbol Micros: TFGA15N120antdu

91123

TFGA15N120antdu

Contractor Symbol:

Case : TO 3P

Datasheet

Technical drawing Add to favourites

IGBT 1200V 30A 186W

Parameters

Gate charge:	180nC
Max. dissipated power:	186W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	4,5V ~ 8,5V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Gate charge:	180nC
Max. dissipated power:	186W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	4,5V ~ 8,5V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.