FGA25N120ANTDTU ONS(FAI)

Symbol Micros: TFGA25N120antdtu
Contractor Symbol:
Case : TO 3P
IGBT 1200V 50A 312W FGA25N120ANTDTU-F109 FGA25N120ANTDTU
Parameters
Gate charge: 200nC
Max. dissipated power: 312W
Max. collector current: 50A
Max collector current (impulse): 90A
Forvard volatge [Vgeth]: 3,5V ~ 7,5V
Case: TO 3P
Collector-emitter voltage: 1200V
         
 
Item available on request
Gate charge: 200nC
Max. dissipated power: 312W
Max. collector current: 50A
Max collector current (impulse): 90A
Forvard volatge [Vgeth]: 3,5V ~ 7,5V
Case: TO 3P
Collector-emitter voltage: 1200V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT