FGA25N120ANTDTU ONS(FAI)

Symbol Micros: TFGA25N120antdtu

91127

TFGA25N120antdtu

Contractor Symbol:

Case : TO 3P

Datasheet

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IGBT 1200V 50A 312W FGA25N120ANTDTU-F109 FGA25N120ANTDTU

Parameters

Gate charge:	200nC
Max. dissipated power:	312W
Max collector current (impulse):	90A
Max. collector current:	50A
Forvard volatge [Vgeth]:	3,5V ~ 7,5V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

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• Parameters

Gate charge:	200nC
Max. dissipated power:	312W
Max collector current (impulse):	90A
Max. collector current:	50A
Forvard volatge [Vgeth]:	3,5V ~ 7,5V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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