FGA60N65SMD
Symbol Micros:
TFGA60N65smd
Case : TO 3P
IGBT 650V 120A 600W
Parameters
| Gate charge: | 284nC |
| Max. dissipated power: | 600W |
| Max. collector current: | 120A |
| Max collector current (impulse): | 180A |
| Forvard volatge [Vgeth]: | 3,5V ~ 6,0V |
| Case: | TO 3P |
| Manufacturer: | ON SEMICONDUCTOR |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FGA60N65SMD RoHS
Case style: TO 3P
In stock:
43 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
|---|---|---|---|---|---|
| Net price (EUR) | 5,4299 | 5,0005 | 4,7350 | 4,6011 | 4,5249 |
| Gate charge: | 284nC |
| Max. dissipated power: | 600W |
| Max. collector current: | 120A |
| Max collector current (impulse): | 180A |
| Forvard volatge [Vgeth]: | 3,5V ~ 6,0V |
| Case: | TO 3P |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 650V |
| Operating temperature (range): | -55°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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