FGA60N65SMD

Symbol Micros: TFGA60N65smd

91130

TFGA60N65smd

Contractor Symbol:

Case : TO 3P

Datasheet

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IGBT 650V 120A 600W

Parameters

Gate charge:	284nC
Max. dissipated power:	600W
Max collector current (impulse):	180A
Max. collector current:	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FGA60N65SMD RoHS Case style: TO 3P  

In stock:

78 pcs.

Quantity of pcs.	1+	3+	10+	30+	150+
Net price (EUR)	4,0561	3,6157	3,3505	3,2179	3,1208

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Packaging:
30/150 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FGA60N65SMD Case style: TO 3P  

External warehouse:

960 pcs.

Quantity of pcs.	450+ (Please wait for the order confirmation)
Net price (EUR)	3,1208

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Packaging:
450

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	284nC
Max. dissipated power:	600W
Max collector current (impulse):	180A
Max. collector current:	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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