FGA60N65SMD

Symbol Micros: TFGA60N65smd

91130

TFGA60N65smd

Contractor Symbol:

Case : TO 3P

Datasheet

Technical drawing Add to favourites

IGBT 650V 120A 600W

Parameters

Gate charge:	284nC
Max. dissipated power:	600W
Max collector current (impulse):	180A
Max. collector current:	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGA60N65SMD RoHS Case style: TO 3P  

In stock:

113 pcs.

Quantity of pcs.	1+	3+	10+	30+	150+
Net price (EUR)	4,0235	3,5866	3,3235	3,1920	3,0957

Add to comparison tool Add inquiry (RFQ)

Packaging:
30/150 Quantity (multiple: 1)

- +

• Parameters

Gate charge:	284nC
Max. dissipated power:	600W
Max collector current (impulse):	180A
Max. collector current:	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.