FGAF40N60SMD

Symbol Micros: TFGAF40N60smd

113240

TFGAF40N60smd

Contractor Symbol:

Case : TO 3Piso

Datasheet

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IGBT 600V 80A 115W

Parameters

Gate charge:	119nC
Max. dissipated power:	115W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO-3Piso
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGAF40N60SMD RoHS Case style: TO 3Piso Datasheet

In stock:

22 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	5,5152	4,6382	4,1110	3,8486	3,7020

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FGAF40N60SMD Case style: TO 3Piso  

External warehouse:

690 pcs.

Quantity of pcs.	60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,7020

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	119nC
Max. dissipated power:	115W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO-3Piso
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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