FGD3245G2-F085C

Symbol Micros: TFGD3245G2-F085C

399865

TFGD3245G2-F085C

Contractor Symbol:

Case : DPAK-3

Datasheet

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IGBT Modules 320 mJ, 450 V, N−Channel Ignition IGBT; 23A; 150W; 120Ohm; -55°C~175°C;

Parameters

Gate charge:	23nC
Max. dissipated power:	150W
Max. collector current:	23A
Forvard volatge [Vgeth]:	1,3V ~ 2,2V
Case:	DPAK-3
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	480V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FGD3245G2-F085C Case style: DPAK-3  

External warehouse:

5000 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,7681

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	23nC
Max. dissipated power:	150W
Max. collector current:	23A
Forvard volatge [Vgeth]:	1,3V ~ 2,2V
Case:	DPAK-3
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	480V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	14V
Mounting:	SMD

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