FGH15T120SMD_F155

Symbol Micros: TFGH15T120smd

91137

TFGH15T120smd

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 1200V 30A 333W

Parameters

Gate charge:	128nC
Max. dissipated power:	333W
Max. collector current:	30A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	4,9V ~ 7,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

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• Parameters

Gate charge:	128nC
Max. dissipated power:	333W
Max. collector current:	30A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	4,9V ~ 7,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	1200V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	25V
Mounting:	THT

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